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1

Electric field distribution using floating metal guard rings edge-termination for Schottky diodes

Driche, Khaled, Rugen, Sarah, Kaminski, Nando, Umezawa, Hitoshi, Okumura, Hajime, Gheeraert, Etienne

Journal:

Diamond and Related Materials

Year:

2018

Language:

english

File:

PDF, 758 KB

english, 2018

2

Nitrogen incorporation characteristics on a 4H-SiC epitaxial layer

Kojima, Kazutoshi, Kuroda, Satoshi, Okumura, Hajime, Arai, Kazuo

Journal:

Applied Physics Letters

Year:

2006

Language:

english

File:

PDF, 314 KB

english, 2006

3

Morphological stability of 4H-SiC crystals in solution growth on {0001} and {

Mitani, Takeshi, Komatsu, Naoyoshi, Hayashi, Yuichiro, Kato, Tomohisa, Okumura, Hajime

Journal:

Journal of Crystal Growth

Year:

2016

Language:

english

File:

PDF, 985 KB

english, 2016

4

Development of a diagnosis technique for failures of V-belts by a cross-spectrum method and a discriminant function approach

Hajime Yamashina, Susumu Okumura, Isao Kawai

Journal:

Journal of Intelligent Manufacturing

Year:

1996

Language:

english

File:

PDF, 729 KB

english, 1996

5

Enhancement of acetic acid production in a high cell-density culture of Acetobacter aceti

Yong Soo Park, Hisao Ohtake, Masahiro Fukaya, Hajime Okumura, Yoshiya Kawamura, Kiyoshi Toda

Journal:

Journal of Fermentation and Bioengineering

Year:

1989

Language:

english

File:

PDF, 432 KB

english, 1989

6

Growth rate and surface morphology of 4H–SiC crystals grown from Si–Cr–C and Si–Cr–Al–C solutions under various temperature gradient conditions

Mitani, Takeshi, Komatsu, Naoyoshi, Takahashi, Tetsuo, Kato, Tomohisa, Fujii, Kuniharu, Ujihara, Toru, Matsumoto, Yuji, Kurashige, Kazuhisa, Okumura, Hajime

Journal:

Journal of Crystal Growth

Year:

2014

Language:

english

File:

PDF, 884 KB

english, 2014

7

[IEEE 2012 24th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Bruges, Belgium (2012.06.3-2012.06.7)] 2012 24th International Symposium on Power Semiconductor Devices and ICs - Determination of optimum structure of 4H-SiC Trench MOSFET

Harada, Shinsuke, Kato, Makoto, Kojima, Takahito, Ariyoshi, Keiko, Tanaka, Yasunori, Okumura, Hajime

Year:

2012

Language:

english

File:

PDF, 811 KB

english, 2012

8

Evidence for a general mechanism modulating carrier lifetime in SiC

Chen, Bin, Sekiguchi, Takashi, Ohyanagi, Takasumi, Matsuhata, Hirofumi, Kinoshita, Akimasa, Okumura, Hajime

Journal:

Physical Review B

Year:

2010

Language:

english

File:

PDF, 419 KB

english, 2010

9

Effect of aluminum addition on the surface step morphology of 4H–SiC grown from Si–Cr–C solution

Mitani, Takeshi, Komatsu, Naoyoshi, Takahashi, Tetsuo, Kato, Tomohisa, Harada, Shunta, Ujihara, Toru, Matsumoto, Yuji, Kurashige, Kazuhisa, Okumura, Hajime

Journal:

Journal of Crystal Growth

Year:

2015

Language:

english

File:

PDF, 806 KB

english, 2015

10

Influences of Solution Flow and Lateral Temperature Distribution on Surface Morphology in Solution Growth of SiC

Fujii, Kuniharu, Takei, Koichi, Aoshima, Masahiro, Senguttuvan, Nachimuthu, Hiratani, Masahiko, Ujihara, Toru, Matsumoto, Yuji, Kato, Tomohisa, Kurashige, Kazuhisa, Okumura, Hajime

Journal:

Materials Science Forum

Year:

2015

Language:

english

File:

PDF, 883 KB

english, 2015

11

Investigation of V-shaped extended defects in a 4H–SiC epitaxial film

Tochigi, Eita, Matsuhata, Hirofumi, Yamaguchi, Hirotaka, Sekiguchi, Takashi, Okumura, Hajime, Ikuhara, Yuichi

Journal:

Philosophical Magazine

Year:

2017

Language:

english

File:

PDF, 2.88 MB

english, 2017

12

Quantitative Analysis of Nanoscale Step Dynamics in High-Temperature Solution-Grown Single Crystal 4H-SiC via In Situ Confocal Laser Scanning Microscope

Onuma, Aomi, Maruyama, Shingo, Komatsu, Naoyoshi, Mitani, Takeshi, Kato, Tomohisa, Okumura, Hajime, Matsumoto, Yuji

Journal:

Crystal Growth & Design

Year:

2017

Language:

english

File:

PDF, 2.31 MB

english, 2017

13

CFD simulation study of the flow conditions of supercritical CO2 in a tubular reactor

Haruki, Masashi, Okumura, Kazuki, Onishi, Hajime, Tada, Yukio

Journal:

The Journal of Supercritical Fluids

Year:

2019

Language:

english

File:

PDF, 492 KB

english, 2019

14

Improved Field Effect Mobility in Si-Face 4H-SiC MOSFETs with a Deposited SiNx Interface Layer

Kumazawa, Teruaki, Okamoto, Mitsuo, Iijima, Miwako, Iwahashi, Yohei, Fujikake, Shinji, Araoka, Tuyoshi, Tawara, Tae, Kimura, Hiroshi, Hamada, Kimimori, Harada, Shinsuke, Okumura, Hajime

Journal:

Materials Science Forum

Year:

2019

Language:

english

File:

PDF, 2.06 MB

english, 2019

15

A Study of CVD Growth Parameters to Fill 50-μm-Deep 4H-SiC Trenches

Ji, Shi Yang, Kosugi, Ryoji, Kojima, Kazutoshi, Adachi, Kohei, Kawada, Yasuyuki, Mochizuki, Kazuhiro, Nagata, Akiyo, Matsukawa, Yasuko, Yonezawa, Yoshiyuki, Yoshida, Sadafumi, Okumura, Hajime

Journal:

Materials Science Forum

Year:

2019

File:

PDF, 1.73 MB

2019

16

Sign of Hall coefficient in nearest-neighbor hopping conduction in heavily Al-doped p-type 4H-SiC

Matsuura, Hideharu, Takeshita, Akinobu, Hidaka, Atsuki, Ji, Shiyang, Eto, Kazuma, Mitani, Takeshi, Kojima, Kazutoshi, Kato, Tomohisa, Yoshida, Sadafumi, Okumura, Hajime

Journal:

Japanese Journal of Applied Physics

Year:

2020

File:

PDF, 207 KB

2020

17

Effects of gamma-ray irradiation on the electrical characteristics of SiC metal-oxide-semiconductor structures

Masahito Yoshikawa, Takeshi Ohshima, Hisayoshi Itoh, Isamu Nashiyama, Yoshihiro Takahashi, Kazunori Ohnishi, Hajime Okumura, Sadafumi Yoshida

Journal:

Electronics and Communications in Japan (Part II: Electronics))

Year:

1998

Language:

english

File:

PDF, 3.31 MB

english, 1998

18

Changes in serum vitellogenin levels and immunohistochemical localization of vitellogenin in hepatic cells during ovarian development in the Japanese eel

Hiromi Okumura, Hajime Matsubara, Shinji Adachi, Kohei Yamauchi

Journal:

Fisheries Science

Year:

2001

Language:

english

File:

PDF, 846 KB

english, 2001

19

Detection of small cracks in the chain of a trolley conveyor with an infrared camera

Hajime Yamashina, Susumu Okumura, Keiji Kimura

Journal:

Journal of Intelligent Manufacturing

Year:

1993

Language:

english

File:

PDF, 1.43 MB

english, 1993

20

A machine vision system for measuring wear and chipping of drilling tools

Hajime Yamashina, Susumu Okumura

Journal:

Journal of Intelligent Manufacturing

Year:

1996

Language:

english

File:

PDF, 1.36 MB

english, 1996

21

Desmoplastic malignant mesothelioma: two cases and a literature review

Hiroshi Hirano, Hajime Maeda, Noriyoshi Sawabata, Yoshitomo Okumura, Shinichi Takeda, Ryoji Maekura, Masami Ito, Tamaki Maeda, Shigeru Nakane, Kunio Uematsu

Journal:

Medical Molecular Morphology

Year:

2003

Language:

english

File:

PDF, 767 KB

english, 2003

22

Electrical and Optical Properties of Stacking Faults in 4H-SiC Devices

Bin Chen, Jun Chen, Takashi Sekiguchi, Takasumi Ohyanagi, Hirofumi Matsuhata, Akimasa Kinoshita, Hajime Okumura

Journal:

Journal of Electronic Materials

Year:

2010

Language:

english

File:

PDF, 388 KB

english, 2010

23

Efficacy of low-dose landiolol, an ultrashort-acting β-blocker, on postoperative atrial fibrillation in patients undergoing pulmonary resection for lung cancer

Takashi Nojiri, Kazuhiro Yamamoto, Hajime Maeda, Yukiyasu Takeuchi, Yasunobu Funakoshi, Ryoji Maekura, Meinoshin Okumura

Journal:

General Thoracic and Cardiovascular Surgery

Year:

2011

Language:

english

File:

PDF, 309 KB

english, 2011

24

Effects of dissolved oxygen and acetic acid concentrations on acetic acid production in continuous culture of Acetobacter aceti

Yong Soo Park, Hisao Ohtake, Masahiro Fukaya, Hajime Okumura, Yoshiya Kawamura, Kiyoshi Toda

Journal:

Journal of Fermentation and Bioengineering

Year:

1989

Language:

english

File:

PDF, 510 KB

english, 1989

25

Growth of 4H-SiC in Current-Controlled Liquid Phase Epitaxy

Mitani, Takeshi, Okamura, Masayuki, Takahashi, Tetsuo, Komatsu, Naoyoshi, Kato, Tomohisa, Okumura, Hajime

Journal:

Materials Science Forum

Year:

2013

Language:

english

File:

PDF, 510 KB

english, 2013

26

Growth Rate and Surface Morphology of 4H-SiC Single Crystal Grown under Various Supersaturations Using Si-C Solution

Komatsu, Naoyoshi, Mitani, Takeshi, Takahashi, Tetsuo, Okamura, Masayuki, Kato, Tomohisa, Okumura, Hajime

Journal:

Materials Science Forum

Year:

2013

Language:

english

File:

PDF, 584 KB

english, 2013

27

Suppression of short step bunching generated on 4H–SiC Si-face substrates with vicinal off-angle

Masumoto, Keiko, Tamura, Kentaro, Kudou, Chiaki, Nishio, Johji, Ito, Sachiko, Kojima, Kazutoshi, Ohno, Toshiyuki, Okumura, Hajime

Journal:

Journal of Crystal Growth

Year:

2014

Language:

english

File:

PDF, 672 KB

english, 2014

28

Growth of Low Resistivity n-Type 4H-SiC Bulk Crystals by Sublimation Method Using Co-Doping Technique

Kato, Tomohisa, Eto, Kazuma, Takagi, Satoru, Miura, Tomonori, Urakami, Yasushi, Kondo, Hiroyuki, Hirose, Fusao, Okumura, Hajime

Journal:

Materials Science Forum

Year:

2014

Language:

english

File:

PDF, 467 KB

english, 2014

29

[IEEE 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Waikoloa, HI, USA (2014.6.15-2014.6.19)] 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - First experimental demonstration of SiC super-junction (SJ) structure by multi-epitaxial growth method

Kosugi, Ryoji, Sakuma, Yuuki, Kojima, Kazutoshi, Itoh, Sachiko, Nagata, Akiyo, Yatsuo, Tsutomu, Tanaka, Yasunori, Okumura, Hajime

Year:

2014

Language:

english

File:

PDF, 841 KB

english, 2014

30

Inhibitory Effects of 4-Hydroxyderricin and Xanthoangelol on Lipopolysaccharide-Induced Inflammatory Responses in RAW264 Macrophages

Yasuda, Michiko, Kawabata, Kyuichi, Miyashita, Miki, Okumura, Mayu, Yamamoto, Norio, Takahashi, Masakazu, Ashida, Hitoshi, Ohigashi, Hajime

Journal:

Journal of Agricultural and Food Chemistry

Year:

2014

Language:

english

File:

PDF, 2.05 MB

english, 2014

31

[IEEE 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Waikoloa, HI, USA (2014.6.15-2014.6.19)] 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Static and dynamic performance evaluation of > 13 kV SiC p-channel IGBTs at high temperatures

Deguchi, Tadayoshi, Mizushima, Tomonori, Fujisawa, Hiroyuki, Takenaka, Kensuke, Yonezawa, Yoshiyuki, Fukuda, Kenji, Okumura, Hajime, Arai, Manabu, Tanaka, Atsushi, Ogata, Syuji, Hayashi, Toshihiko, Na

Year:

2014

Language:

english

File:

PDF, 1.36 MB

english, 2014

32

Characterization of residual defects in cubic silicon carbide subjected to hot-implantation and subsequent annealing

Itoh, Hisayoshi, Ohshima, Takeshi, Aoki, Yasushi, Abe, Koji, Yoshikawa, Masahito, Nashiyama, Isamu, Okumura, Hajime, Yoshida, Sadafumi, Uedono, Akira, Tanigawa, Shoichiro

Journal:

Journal of Applied Physics

Year:

1997

Language:

english

File:

PDF, 420 KB

english, 1997

33

Tuning minority-carrier lifetime through stacking fault defects: The case of polytypic SiC

Chen, Bin, Matsuhata, Hirofumi, Sekiguchi, Takashi, Kinoshita, Akimasa, Ichinoseki, Kyouichi, Okumura, Hajime

Journal:

Applied Physics Letters

Year:

2012

Language:

english

File:

PDF, 1.08 MB

english, 2012

34

Effects of interface state density on 4H-SiC n-channel field-effect mobility

Yoshioka, Hironori, Senzaki, Junji, Shimozato, Atsushi, Tanaka, Yasunori, Okumura, Hajime

Journal:

Applied Physics Letters

Year:

2014

Language:

english

File:

PDF, 826 KB

english, 2014

35

Homoepitaxial Growth of Cubic GaN by Hydride Vapor Phase Epitaxy on Cubic GaN/GaAs Substrates Prepared with Gas Source Molecular Beam Epitaxy

Tsuchiya, Harutoshi, Okahisa, Takuji, Hasegawa, Fumio, Okumura, Hajime, Yoshida, Sadafumi

Journal:

Japanese Journal of Applied Physics

Year:

1994

File:

PDF, 1.45 MB

1994

36

Accurate Characterization of Interface State Density of SiC MOS Structures and the Impacts on Channel Mobility

Yoshioka, Hironori, Nakamura, Takashi, Senzaki, Junji, Shimozato, Atsushi, Tanaka, Yasunori, Okumura, Hajime, Kimoto, Tsunenobu

Journal:

Materials Science Forum

Year:

2014

Language:

english

File:

PDF, 241 KB

english, 2014

37

Improvement of AlGaN/GaN Heterostructure Field Effect Transistor Characteristics by Using Two-Step Ohmic Contact Process

Cho, Dong-Hyun, Shimizu, Mitsuaki, Ide, Toshihide, Shim, Byoungrho, Okumura, Hajime

Journal:

Japanese Journal of Applied Physics

Year:

2003

Language:

english

File:

PDF, 207 KB

english, 2003

38

Improved Contact Resistance in AlGaN/GaN Heterostructures by Titanium Distribution Control at the Metal–Semiconductor Interface

Sazawa, Hiroyuki, Honda, Yoshiaki, Hata, Masahiko, Hasegawa, Akira, Hamamatsu, Hiroshi, Shimizu, Mitsuaki, Okumura, Hajime, Sakurai, Takeaki, Akimoto, Katsuhiko

Journal:

Applied Physics Express

Year:

2008

Language:

english

File:

PDF, 765 KB

english, 2008

39

New Brush Scrubbing Techniques for a Wafer Bevel, Apex and Edge

Ugajin, Hajime, Iwamoto, Hayato, Hide, Eiji, Hiraoka, Nobuyasu, Okumura, Tsuyoshi

Journal:

Solid State Phenomena

Year:

2008

Language:

english

File:

PDF, 376 KB

english, 2008

40

Striatal and Extrastriatal Dopamine D2 Receptor Occupancy by a Novel Antipsychotic, Blonanserin

Tateno, Amane, Arakawa, Ryosuke, Okumura, Masaki, Fukuta, Hajime, Honjo, Kazuyoshi, Ishihara, Keiichi, Nakamura, Hiroshi, Kumita, Shin-ichiro, Okubo, Yoshiro

Journal:

Journal of Clinical Psychopharmacology

Year:

2013

Language:

english

File:

PDF, 311 KB

english, 2013

41

Protium Absorbing and Desorbing Characteristics of Mg2Ni-Mn Alloy

Okumura, Hajime, Kamado, Shigeharu, Tabata, T., Matsui, A., Kojima, Yo

Journal:

Materials Science Forum

Year:

2000

File:

PDF, 572 KB

2000

42

Influence of Micropipe and Domain Boundary in SiC Substrate on the DC Characteristics of AlGaN/GaN HFET

Sazawa, Hiroyuki, Kato, Tomohisa, Kojima, Kazutoshi, Furuta, K., Hirata, K., Kosaki, M., Kinoshita, M., Mitani, Takeshi, Nakashima, Shinichi, Okumura, Hajime

Journal:

Materials Science Forum

Year:

2007

Language:

english

File:

PDF, 672 KB

english, 2007

43

Electrical Characteristics of Ti/4H-SiC Slicidation Schottky Barrier Diode

Kinoshita, Akimasa, Nishi, Takashi, Ohyanagi, Takasumi, Yatsuo, Tsutomu, Fukuda, Kenji, Okumura, Hajime, Arai, Kazuo

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 375 KB

english, 2009

44

Development of a Practical High-Rate CVD System

Ishida, Yuuki, Takahashi, Tetsuo, Okumura, Hajime, Arai, Kazuo, Yoshida, S.

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 382 KB

english, 2009

45

Challenges of High-Performance and High-Reliablity in SiC MOS Structures

Senzaki, Junji, Shimozato, Atsushi, Kojima, Kazutoshi, Kato, Tomohisa, Tanaka, Yasunori, Fukuda, Kenji, Okumura, Hajime

Journal:

Materials Science Forum

Year:

2012

Language:

english

File:

PDF, 568 KB

english, 2012

46

A roadmap for future wide bandgap semiconductor power electronics

Okumura, Hajime

Journal:

Year:

2015

Language:

english

File:

PDF, 2.37 MB

english, 2015

47

An Investigation of Material Limit Characteristics of SiC IGBTs

Hatakeyama, Tetsuo, Fukuda, Kenji, Okumura, Hajime

Journal:

Materials Science Forum

Year:

2012

Language:

english

File:

PDF, 406 KB

english, 2012

48

4H-SiC Growth from Si-Cr-C Solution under Al and N Co-Doping Conditions

Mitani, Takeshi, Komatsu, Naoyoshi, Takahashi, Tetsuo, Kato, Tomohisa, Ujihara, Toru, Matsumoto, Yuji, Kurashige, Kazuhisa, Okumura, Hajime

Journal:

Materials Science Forum

Year:

2015

Language:

english

File:

PDF, 477 KB

english, 2015

49

Control of the Surface Morphology on Low Off Angled 4H-SiC Homoepitaxal Growth

Kojima, Kazutoshi, Okumura, Hajime, Arai, Kazuo

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 362 KB

english, 2009

50

Control of Void Formation in 4H-SiC Solution Growth

Mitani, Takeshi, Okamura, Masayuki, Takahashi, Tetsuo, Komatsu, Naoyoshi, Kato, Tomohisa, Okumura, Hajime

Journal:

Materials Science Forum

Year:

2012

Language:

english

File:

PDF, 508 KB

english, 2012

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